TY - JOUR ID - 38717 TI - Extended-Gate Field-Effect Transistor based Sensor for Detection of Hyoscine N-Butyl Bromide in its Pharmaceutical Formulation JO - Analytical and Bioanalytical Electrochemistry JA - ABEC LA - en SN - - AU - Sheibani, Shokoofeh AU - Iman Mirzaie, Seyed AU - Fardmanesh, Mehdi AU - Norouzi, Parviz AD - Center of Excellence in Electrochemistry, School of Chemistry, University of Tehran, Tehran, 1417614411, Iran AD - School of Electrical Engineering, Sharif University of Technology, Tehran, Iran Y1 - 2020 PY - 2020 VL - 12 IS - 2 SP - 238 EP - 249 KW - Ion Sensitive Field Effect Transistors sensor KW - Hyoscine N-Butyl bromide KW - PVC membrane DO - N2 - A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the extended metal gate. In optimal conditions, the linear range for HBB was 10-8-10-5 molL−1 with limit of detection 1.7×10-9 molL-1. The proposed sensor was applied in real sample, it showed fast response with high accuracy, and therefore it could be used as HPLC detector in the pharmaceutical samples in quality control. UR - https://www.abechem.com/article_38717.html L1 - https://www.abechem.com/article_38717_f8126cd9511d3fac5e33a13f29ab59b5.pdf ER -