Keywords = Ion Sensitive Field Effect Transistors sensor
Extended-Gate Field-Effect Transistor based Sensor for Detection of Hyoscine N-Butyl Bromide in its Pharmaceutical Formulation

Volume 12, Issue 2, February 2020, Pages 238-249

Shokoofeh Sheibani; Seyed Iman Mirzaie; Mehdi Fardmanesh; Parviz Norouzi